Recently,  our lab has successfully used Pulsed Laser Single Event Effects (PLSEE)  Experimental Device which is firstly made by us around our country in  testing VLSI. We made significantly progress in VLSI’s backside  radiation scanning and quantification testing, meanwhile, our country’s  independently made electric device’s ability for SEE has been tested.  During few hours, we finished test for Single Event Upset (SEU), Single  Event Latchup(SEL) and Single Event Transient of 0.13mm and 0.18mm SRAM  and logic circuit; results showed that harden radiation methods worked  well. PLSEE and its experimental method has “rapidity, well, economic”  characteristics which can be widely used and can greatly promote  investigation for space navigation electric device.

Experiment Circuit of Single Event Effects for SRAM and Logic Circuit.