Recently, entrusted by an institute of Chinese Academy of Sciences, we have evaluated the single event effects of the application special integrated circuitby single event effect pulsed laser experimental facility. Single event latch-up effect and Single event transient effect were observed. We measured the latch-up equivalent LET threshold and located the areas sensitive to SEL. Pulsed laser experimental facility can be used to efficiently assess single event effect for designed chips. It provides targeted experimental data for chip optimized design. Accordingly, the chip development cycle would be shortened efficiently. Fig.1 the change curves of observed single event latch-up and single event transient effects for ASIC.